TOPPANToppan Technical Design Center Co.LtdAbout us
Memory Development
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  Memory Development  
  Our broad range of memory elements includes basic memory cells and memory macros to the memory blocks for LSIs.  
 
We use the latest flash memory technology to implement designs spanning the range from large capacity flash memory to low capacity, specialized memory. In addition to RTL definition and design, we provide for optimized automatic layout and mixed signal verification. Examples of flash memory designs that TDC has implemented:
* Large capacity flash memory for mobile phones
* Large capacity flash memory for files
* Small capacity flash memory for digital home
electronics appliances
* Flash macros together with microcomputers
Our SRAM design capabilities range from very high speed to medium speed SRAM for SOCs as either multi-purpose memory or embedded memory, in single, dual or multi-port configuration. Where appropriate, we utilize complied macro design techniques for optimized implementations. Examples of SRAMs TDC has implemented:
* HS-SRAM (upto 600MHz)
* Standard SRAM
* Dual port SRAM
* Multi-port SRAM
* Various SRAM macros
Associative memory is a special type of memory for searching for similar patterns by comparing input patterns against a large quantity of stored reference patterns. TDC has associative memory macros available to meet your SOC requirements.
* Associative memory macro

TDC's services range from circuit design to layout design for multi-purpose high-speed DRAMs for a variety of applications, such as: PCs, customized DRAM, pseudo-SRAM for mobile phones, and others, utilizing the latest advanced DRAM technology. Examples of DRAMs implemented:

* SDR-SDRAM
* DDR-SDRAM (upto 400MHz)
* Customized DRAM
* Mobile DRAM (pseudo-SRAM)
EEPROM memory can be written and deleted in byte units, and has a wide range of uses, including medium capacity EEPROM for IC cards and serial EEPROMs for devices with low pin count availability.
* Parallel EEPROMs
* Serial EEPROMs (I2C / SPI BUS)
 
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